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Slow and Fast Light in Semiconductors

Authors:
Sedgwick, Forrest G.
Technical Report Identifier: EECS-2008-15
February 14, 2008
EECS-2008-15.pdf

Abstract: Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.